Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Semiconductor surfaces
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4. Si (111) 7 × 7 surface structure: Calculations of LEED intensity and comparison with experiment
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1. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface;Nanomaterials;2023-01-04
2. Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy;Surface Science;2018-05
3. Si(111) strained layers on Ge(111): Evidence for c ( 2×4 ) domains;Physical Review B;2017-08-01
4. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017
5. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01
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