Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3318260
Reference29 articles.
1. Introducing crystalline rare-earth oxides into Si technologies
2. Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)
3. Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
4. Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters
5. Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(1 1 1) substrates;Journal of Crystal Growth;2017-12
2. Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation;Journal of Materials Research;2017-02-08
3. Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices;IEEE Transactions on Electron Devices;2016-07
4. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05
5. Superior dielectric properties for template assisted grown (100) oriented Gd2O3thin films on Si(100);Applied Physics Letters;2014-01-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3