Stability and surface properties of GeSi alloy films on Si(111) substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference23 articles.
1. Crystalline semiconductor heterostructures
2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
3. Summary Abstract: Observation and properties of the Ge(111)‐7×7 surface from Si(111)/Ge structures
4. H.-J. Gossmann, J.C. Bean, L.C. Feldmann, E.G. McRae and I.K. Robinson, to be published.
5. Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys
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1. Electronic and atomic structure of in the initial stages of Ge chemisorption;Surface Science;1997-01
2. Si1−xGex alloy growth on Si(111) surfaces from gaseous hydride sources;Surface Science;1993-12
3. Energetics of the Si(111) and Ge(111) surfaces and the effect of strain;Physical Review B;1993-08-15
4. Initial growth of Ge films on Si(111)7 × 7 surfaces by gas source molecular beam epitaxy;Applied Surface Science;1992-01
5. Surface structural changes during the initial growth of Ge on Si(111)7 × 7;Applied Surface Science;1992-01
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