Electronic and atomic structure of in the initial stages of Ge chemisorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference40 articles.
1. Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces
2. Stability and surface properties of GeSi alloy films on Si(111) substrate
3. Growth and surface structure of Ge–Si alloy films on Si(111)‐(7×7)
4. Low energy electron microscopy studies of Ge and Ag growth on Si(111)
5. Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces
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1. New insight on the role of localisation in the electronic structure of the Si(111)(7 × 7) surfaces;Scientific Reports;2021-07-22
2. Germanium: Epitaxy and its applications;Progress in Crystal Growth and Characterization of Materials;2010-09
3. Scanning Tunneling Microscopy of the Si(111)-7×7 Surface and Adsorbed Ge Nanostructures;Applied Scanning Probe Methods XII;2009
4. Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations;Journal of Nanomaterials;2008
5. Initial stages of the adsorption of Ge atoms on theSi(111)−(7×7)surface;Physical Review B;2006-09-05
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