Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Surface stacking sequence and (7 × 7) reconstruction at Si(111) surfaces
2. Surface reconstruction on semiconductors
3. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface reconstruction at the initial Ge adsorption stage on Si(114)-2 × 1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03
2. Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces;Physical Review B;2012-11-30
3. STM observation and first-principles determination of Ge nanoscale structures on Si(111);Physical Review B;2007-02-12
4. Hydrogen desorption kinetics and Ge2H6 reactive sticking probabilities on Ge-adsorbed Si();Surface Science;2002-04
5. Surface morphology and electronic structure of Ge/Si(1 1 1) 7×7 system;Applied Surface Science;2001-03
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