Hydrogen desorption kinetics and Ge2H6 reactive sticking probabilities on Ge-adsorbed Si()
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Growth and band gap of strained 〈110〉 Si1−xGexlayers on silicon substrates by chemical vapor deposition
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4. Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
5. Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption
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1. Specific Features of the Interaction of a Germane Molecule with Germanium Surface in Vacuum in the Presence of Hydrogen Flow;Technical Physics;2021-07
2. Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides;Semiconductors;2019-07
3. Energetics and Rate Constants of Si2H6 and Ge2H6 Dissociative Adsorption on Dimers of SiGe(100)-2 × 1;The Journal of Physical Chemistry C;2007-08-22
4. Infrared spectroscopic identification of digermene, Ge2H4(X1Ag), and of the digermenyl radical, Ge2H3(X2A″), together with their deuterated counterparts in low temperature germane matrices;Chemical Physics;2006-11
5. First infrared spectroscopic characterization of digermyl (Ge2H5) and d5-digermyl (Ge2D5) radicals in low temperature germane matrices;Chemical Physics;2006-06
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