Ge(5×5) as a wetting layer on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. Model for the energetics of Si and Ge (111) surfaces
2. 7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain
3. Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation
4. Reconstructions and phase transitions of Ge on the Si(111)7 × 7 surface
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Identification of Si and Ge Atoms by Non-Contact Atomic Force Microscopy;Hyomen Kagaku;2016
2. Identification of Si and Ge atoms by atomic force microscopy;Physical Review B;2015-10-09
3. Adsorption of selenium atoms at the Si(111)-7×7 surface: A combination of scanning tunnelling microscopy and density functional theory studies;Chemical Physics;2011-04
4. First-principles study of near surface point defects stability in Si (100) and SiGe(100);Thin Solid Films;2010-02
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