Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system-Reference-Cited by-同舟云学术

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Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Published:2014-12-18 Issue:1 Volume:54 Page:015505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ni Yiqiang,He Zhiyuan,Yang Fan,Zhou Deqiu,Yao Yao,Zhou Guilin,Shen Zhen,Zhong Jian,Zhen Yue,Wu Zhisheng,Zhang Baijun,Liu Yang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=1/a=015505/pdf

Reference32 articles.

1. MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

2. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

3. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

4. Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition

5. Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth on 5”φ Si (111) Substrate

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1. Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors;Journal of Applied Physics;2024-07-23

2. The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111);Micromachines;2024-04-16

3. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates;Journal of Applied Physics;2024-04-10

4. Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics;physica status solidi (b);2024-03-16

5. Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition);Japanese Journal of Applied Physics;2023-11-01

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