Affiliation:
1. Hubei Jiufengshan Laboratory, Wuhan 430074, China
Abstract
The high transport characteristics of AlGaN/GaN heterostructures are critical components for high-performance electronic and radio-frequency (RF) devices. We report the transport characteristics of AlGaN/GaN heterostructures grown on a high-resistivity (HR) Si(111) substrate, which are unevenly distributed in the central and edge regions of the wafer. The relationship between the composition, stress, and polarization effects was discussed, and the main factors affecting the concentration and mobility of two-dimensional electron gas (2DEG) were clarified. We further demonstrated that the mechanism of changes in polarization intensity and scattering originates from the uneven distribution of Al composition and stress in the AlGaN barrier layer during the growth process. Furthermore, our results provide an important guide on the significance of accomplishing 6 inch AlGaN/GaN HEMT with excellent properties for RF applications.
Funder
Central Funds Guiding the Local Science and Technology Development Project of Hubei Province, China
Natural Science Foundation of Hubei Province, China
Reference39 articles.
1. GaN-Based RF Power Devices and Amplifiers;Mishra;Proc. IEEE,2008
2. k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures;Lev;Nat. Commun.,2018
3. Gallium nitride-based complementary logic integrated circuits;Zheng;Nat. Electron.,2021
4. Zeng, F., An, J., Zhou, G., Li, W., Wang, H., Duan, T., Jiang, L., and Yu, H. (2018). A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. Electronics, 7.
5. Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs;Wang;IEEE Trans. Device Mater. Reliab.,2020