Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1372160
Reference46 articles.
1. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
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3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Trends in residual stress for GaN/AlN/6H–SiC heterostructures
5. Trends in residual stress for GaN/AlN/6H–SiC heterostructures
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