Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1479455
Reference17 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. Multicolored light emitters on silicon substrates
3. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
4. Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates
5. Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy
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4. Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications;Journal of Physics D: Applied Physics;2022-11-14
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