Abstract
Despite of the technological importance of developing AlGaN deep UV LEDs on Si, there are only a few reports about AlGaN deep UV LEDs on Si based on AlGaN epilayers. Herein, we show vertical AlGaN deep UV LEDs on Si with polarization enhanced p-AlGaN epilayer. The devices emit at 278 nm, with uniform current injection. Compared to devices using standard p-AlGaN epilayer, the series resistance of devices with polarization enhanced p-AlGaN epilayer is reduced by a factor of 5. This work represents the first report of AlGaN deep UV LEDs on Si with polarization enhanced p-AlGaN epilayers.
Funder
Fonds de Recherche du Québec - Nature et Technologies
Natural Sciences and Engineering Research Council of Canada
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献