Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
2. Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
Funder
Fonds de Recherche du Québec - Nature et Technologies
Natural Sciences and Engineering Research Council of Canada
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaom.3c00023
Reference77 articles.
1. GaN, AlN, and InN: A review
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
4. Field emission properties of heavily Si-doped AlN in triode-type display structure
5. Room-Temperature Stimulated Emission from AlN at 214 nm
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1. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024
2. Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors;ACS Photonics;2023-05-10
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