MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates-Reference-Cited by-同舟云学术

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Published:2006-01 Issue:2 Volume:287 Page:610-614
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mastro M.A.,Eddy C.R.,Gaskill D.K.,Bassim N.D.,Casey J.,Rosenberg A.,Holm R.T.,Henry R.L.,Twigg M.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Processing of novel SiC and group III-nitride based micro- and nanomechanical devices

2. The Effect of Microstructure on AlN MEMS Resonator Response

3. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

4. In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates

5. Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates

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1. Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film;Applied Physics Letters;2024-09-09

2. Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations;2023-09-06

3. Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth;Nanomaterials;2023-04-16

4. Chlorine-Assisted Growth of Epitaxial InGaN and AlGaN Crystals at Low Temperatures Using Plasma-Enhanced Chemical Vapor Deposition;Crystal Growth & Design;2022-12-21

5. Molecular Beam Epitaxy of AlGaN Epilayers on Si for Vertical Deep Ultraviolet Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2022-11-01

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