Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors

Abstract

Grain sizes, impurities, and layer thicknesses in the nm-range affect the heat transport and, hence, hinder proper heat dissipation of GaN-based devices. To obtain a clear picture of heat dissipation, the mechanisms of heat transport must be linked to the structural properties of the nitride-based materials in the device. In this paper, a systematic investigation of the typical layers of GaN high-electron mobility transistor stacks was conducted by time-domain thermoreflectance analysis and Raman measurements. The analyzed layers are the AlN nucleation layer, the Al0.3Ga0.7N transition layer, the AlGaN/AlN superlattice, the C-doped GaN back-barrier, and the uid GaN layer. The results were interpreted using the Born–van Karman model, including the suppression function approach to describe the governing heat transport mechanisms. Investigation of this AlN nucleation layer showed that its phonon scattering is dominated by impurity and grain boundary scattering. The Al0.3Ga0.7N transition layer was shown to have a reduced thermal conductivity not only due to alloy scattering but also because of grain boundary scattering. The AlGaN/AlN superlattice showed a thermal conductivity lower than the Al0.3Ga0.7N transition layer, especially at higher temperatures (7.2 ± 0.2 W/mK vs 14.1 ± 0.4 W/mK at 300 °C). Caused by the enhanced AlGaN/AlN interface density, the thermal conductance was found to be 2 GW/m2 K. The AlGaN/AlN superlattice indicated an anisotropic thermal transport with a factor of ∼1.5. The C-doped GaN layers were analyzed in terms of their size-dictated thermal conductivity, resulting in a reduction of ∼66% from 1 μm to 250 nm at 30 °C. Raman spectroscopy revealed that the thicker the GaN layer, the higher the compressive stress in GaN, which additionally results in a higher thermal transport. The investigations of the heat transport depending on the structural properties enabled an accurate determination of the thermal conductivity of the layer stack. These thermal conductivities served as input parameters for 3D simulation to extract the temperature, in terms of the thermal resistance, of such high-electron mobility transistor stacks. This simulation shows the importance of the GaN layer in terms of thermal management. This work uncovers the thermal transport in GaN-based transistor stacks with the aim to improving the thermal design.