Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond-Reference-Cited by-同舟云学术

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Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

Published:2019 Issue: Volume:7 Page:1264-1269
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Ranjan K.^ORCID,Arulkumaran S.,Ng G. I.^ORCID,Sandupatla A.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08869814.pdf?arnumber=8869814

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles study on thermal transport properties of GaN under different cross-plane strain;International Journal of Heat and Mass Transfer;2024-11

2. Revisiting the effectiveness of diamond heat spreaders on multi-finger gate GaN HEMT using chip-to-package-level thermal simulation;Microelectronics Reliability;2024-10

3. Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors;Journal of Applied Physics;2024-07-23

4. Understanding the Role of Near-Junction Diamond Heat Spreaders in Packaged 20-Gate GaN HEMT Chips via Thermal Simulation;Journal of Electronic Materials;2024-07-08

5. Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study;Materials Science and Engineering: B;2024-03

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