Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412824
Reference20 articles.
1. Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation
2. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
3. Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
4. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
5. Multicolored light emitters on silicon substrates
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