Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference46 articles.
1. Ripening and annealing effects in InAs/GaAs(001) quantum dot formation
2. The role of arsine in the self-assembled growth of InAs∕GaAs quantum dots by metal organic chemical vapor deposition
3. In situ scanning tunneling microscopy of InAs quantum dots on GaAs() during molecular beam epitaxial growth
4. Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber
5. In SituScanning Tunneling Microscope Observation of InAs Wetting Layer Formation on GaAs(001) during Molecular Beam Epitaxy Growth at 500 °C
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1. In-place bonded semiconductor membranes as compliant substrates for III–V compound devices;Nanoscale;2019
2. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16
3. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
4. Strain relaxation and compositional separation during growth of InGaAs/GaAs(001);Journal of Crystal Growth;2017-06
5. Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate;Scientific Reports;2017-02-13
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