In-place bonded semiconductor membranes as compliant substrates for III–V compound devices-Reference-Cited by-同舟云学术

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In-place bonded semiconductor membranes as compliant substrates for III–V compound devices

Published:2019 Issue:8 Volume:11 Page:3748-3756
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Garcia Jr. Ailton J.¹²³⁴^ORCID,Rodrigues Leonarde N.¹²³⁴⁵,Covre da Silva Saimon Filipe¹²³⁴⁵,Morelhão Sergio L.⁶⁷⁸⁴^ORCID,Couto Jr. Odilon D. D.⁹¹⁰³⁴^ORCID,Iikawa Fernando⁹¹⁰³⁴^ORCID,Deneke Christoph¹²³⁴⁹^ORCID

Affiliation:

1. Laboratório Nacional de Nanotecnologia (LNNano)

2. Centro Nacional de Pesquisa em Energia e Materiais (CNPEM)

3. Campinas

4. Brasil

5. Departamento de Física

6. Instituto de Física

7. Universidade de São Paulo (USP)

8. São Paulo

9. Instituto de Física “Gleb Wataghin”

10. Universidade Estadual de Campinas (Unicamp)

Abstract

Overcoming the critical thickness limit in pseudomorphic growth of lattice mismatched heterostructures is a fundamental challenge in heteroepitaxy.

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR08727J

Reference37 articles.

1. Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

2. Silicon Nanomembranes

3. Synthesis, assembly and applications of semiconductor nanomembranes

4. J. A. Rogers and J.-H.Ahn , Silicon Nanomembranes: Fundamental Science and Applications , Wiley , 2016

5. Nanotechnology — Bottom-up Meets Top-down

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2. Direct observation of large-area strain propagation on free-standing nanomembranes;Physical Review Materials;2023-02-23

3. Defect free strain relaxation of microcrystals on mesoporous patterned silicon;Nature Communications;2022-11-04

4. Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate;Nanoscale Research Letters;2022-10-15

5. Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators;MRS Advances;2020-07

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