The role of arsine in the self-assembled growth of InAs∕GaAs quantum dots by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2173687
Reference16 articles.
1. Formation trends in quantum dot growth using metalorganic chemical vapor deposition
2. Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD
3. InAs quantum dots grown on InGaAs buffer layers by metal–organic chemical vapor deposition
4. InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
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2. Single-section mode-locked 1.55-μm InAs/InP quantum dot lasers grown by MOVPE;Optics Communications;2016-07
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4. Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001);Japanese Journal of Applied Physics;2013-04-01
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