Formation trends in quantum dot growth using metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1543647
Reference14 articles.
1. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
2. Low-threshold oxide-confined 1.3-μm quantum-dot laser
3. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
4. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
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