Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application-Reference-Cited by-同舟云学术

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Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Published:2015-06-16 Issue:7 Volume:30 Page:075008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Park K W,Kang S J,Ravindran Sooraj,Min J W,Lee S K,Lee Y T

Funder

Ministry of Education, Science and Technology

Agency for Defense Development

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=7/a=075008/pdf

Reference50 articles.

1. Solar cell efficiency tables (version 44)

2. New Phenomenon in Narrow Germaniump−nJunctions

3. Use of nonstoichiometry to form GaAs tunnel junctions

4. Diffusion mechanism of zinc and beryllium in gallium arsenide

5. Application of δ-doping in GaAs tunnel junctions

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1. Gymnema montanum improves endothelial function via inhibition of endoplasmic reticulum stress by activating Nrf2 signaling;Asian Pacific Journal of Tropical Biomedicine;2020

2. Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE;Japanese Journal of Applied Physics;2018-10-30

3. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers;Semiconductor Science and Technology;2017-10-26

4. Tunnel currents produced by defects in p-n junctions of GaAs grown on vapor phase;Journal of Physics: Conference Series;2017-01

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