Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers-Reference-Cited by-同舟云学术

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Published:2017-10-26 Issue:12 Volume:32 Page:125001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Golovynskyi S^ORCID,Datsenko O,Seravalli L^ORCID,Kozak O,Trevisi G^ORCID,Frigeri P^ORCID,Babichuk I S^ORCID,Golovynska I^ORCID,Qu Junle^ORCID

Funder

Shenzhen Basic Research Project

Hong Kong, Macao and Taiwan cooperation innovation platform & major projects of international cooperation in Colleges and Universities in Guangdong Province

Guangdong Natural Science Foundation Innovation Team

National Natural Science Foundation of China

COST Action "Nanoscale Quantum Optics" of European Union

National Basic Research Program of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aa91e7/pdf

Reference64 articles.

1. Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells

2. High saturation intensity in InAs/GaAs quantum dot solar cells and impact on the realization of the intermediate band concept at room-temperature

3. Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells

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