Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells
Author:
Affiliation:
1. Nanopower Research Laboratories, Rochester Institute of Technology, Rochester, New York 14623, USA
2. Wright Center for Photovoltaic Innovation and Commercialization (PVIC), The University of Toledo, Toledo, Ohio 43606, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4972958
Reference54 articles.
1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
2. Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays
3. Intermediate band solar cells: Recent progress and future directions
4. Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells
5. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
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