Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure
Author:
Affiliation:
1. Department of Electrical Engineering, Yuan Ze University, Chung-Li 32003, Taiwan
2. Department of Electrical Engineering, National Central University, Chung-Li 32001, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5097879
Reference43 articles.
1. InGaAs-GaAs quantum-dot lasers
2. Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection
3. InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate
4. InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
5. Spectrally Resolved Interband and Intraband Transitions by Two-Step Photon Absorption in InGaAs/GaAs Quantum Dot Solar Cells
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1. Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing;Journal of Materials Science: Materials in Electronics;2023-05
2. Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions;ECS Journal of Solid State Science and Technology;2022-09-01
3. Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures;AIP Advances;2021-07-01
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