Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection-Reference-Cited by-同舟云学术

Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

Published:2005-02-15 Issue:4 Volume:97 Page:043523
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sugawara M.,Hatori N.,Ebe H.,Ishida M.,Arakawa Y.,Akiyama T.,Otsubo K.,Nakata Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1849426

Reference17 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. 1.3 μm room-temperature GaAs-based quantum-dot laser

3. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

4. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

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