InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate-Reference-Cited by-同舟云学术

InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate

Published:2014-06-27 Issue:7 Volume:1 Page:638-642
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Chen Siming¹,Tang Mingchu¹,Jiang Qi¹,Wu Jiang¹,Dorogan Vitaliy G.²,Benamara Mourad²,Mazur Yuriy I.²,Salamo Gregory J.²,Smowton Peter³,Seeds Alwyn¹,Liu Huiyun¹

Affiliation:

1. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

2. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

3. School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/ph500162a

Reference32 articles.

1. Recent progress in lasers on silicon

2. Silicon optical modulators

3. High-performance Ge-on-Si photodetectors

4. Nonlinear silicon photonics

5. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

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