Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration-Reference-Cited by-同舟云学术

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Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration

Published:2023-06 Issue: Volume:258 Page:119799
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Hou Yaonan,Skandalos Ilias,Tang Mingchu,Jia Hui,Deng Huiwen,Yu Xuezhe,Noori Yasir,Stathopoulos Spyros,Chen Siming,Liu Huiyun,Seeds Alwyn,Reed Graham,Gardes Frederic

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference48 articles.

1. Integration of iii-v lasers on si for si photonics;Tang;Prog. Quantum Electron.,2019

2. Perspectives on advances in quantum dot lasers and integration with si photonic integrated circuits;Shang;ACS Photonics,2021

3. Development of quantum dot lasers for data-com and silicon photonics applications;Nishi;IEEE J. Sel. Top. Quantum Electron.,2017

4. Electrically pumped continuous-wave iii–v quantum dot lasers on silicon;Chen;Nat. Photonics,2016

5. Integrated tunable cmos laser for si photonics;Marchena,2013

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