Effect of Position-Dependent Doping on Intermediate Band Generation-Recombination Rate in InAs/GaAs Quantum Dot Solar Cell
Author:
Affiliation:
1. Department of Electronics Engineering, IIT (ISM) Dhanbad, Dhanbad, Jharkhand, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/9682520/09729605.pdf?arnumber=9729605
Reference25 articles.
1. Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al0.3Ga0.7/GaAs Quantum Wells
2. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
3. Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells
4. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
5. Impact of doping on InAs/GaAs quantum-dot solar cells: A numerical study on photovoltaic and photoluminescence behavior
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1. Impact of effective capture cross-section on device performance of InAs/GaAs quantum dot solar cell;Optical and Quantum Electronics;2022-07-21
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