Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE-Reference-Cited by-同舟云学术

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Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

Published:2018-10-30 Issue:12 Volume:57 Page:120306
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kang Seokjin,Ju Gun Wu,Min Jung-Wook,Lee Dong-Seon,Lee Yong Tak,Kim Hyo Jin,Park Kwangwook

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=12/a=120306/pdf

Reference42 articles.

1. Discovery of the tunnel diode

2. Electrical Design Optimization of Single-Mode Tunnel-Junction-Based Long-Wavelength VCSELs

3. Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

4. Ultralow DC power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless applications

5. 20 GHz Wavelet Generator Using a Gated Tunnel Diode

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1. 1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells;ACS Applied Optical Materials;2024-04-10

2. Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping;Nanomaterials;2023-03-01

3. Delta-Doping for Enhanced III-V Tunnel Junction Performance;IEEE Journal of Photovoltaics;2022-07

4. The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance;Journal of Applied Physics;2019-08-28

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