Delta-Doping for Enhanced III-V Tunnel Junction Performance-Reference-Cited by-同舟云学术

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Delta-Doping for Enhanced III-V Tunnel Junction Performance

Published:2022-07 Issue:4 Volume:12 Page:976-981
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Sun Yukun¹^ORCID,Fan Shizhao²^ORCID,Jung Daehwan¹,Hool Ryan D³^ORCID,Li Brian²,Vaisman Michelle¹^ORCID,Lee Minjoo²^ORCID

Affiliation:

1. Department of Electrical Engineering, Yale University, New Haven, CT, USA

2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA

3. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA

Funder

ARPA-E FOCUS

National Aeronautics and Space Administration Space Technology Research Fellowships

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/9801835/09786529.pdf?arnumber=9786529

Reference36 articles.

1. High-Speed MOVPE Growth of InGaP Solar Cells

2. Development of High-Bandgap AlGaInP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy

3. Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy

4. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

5. On the thermal degradation of tunnel diodes in multijunction solar cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants;AIP Advances;2023-04-01

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