Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference21 articles.
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3. The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces
4. Atomic Structure of theGaAs(001)−(2×4)Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory
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