Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)-Reference-Cited by-同舟云学术

Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)

Published:2018-08-23 Issue: Volume: Page:1800476
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ito Tomonori¹,Akiyama Toru¹,Nakamura Kohji¹,Pradipto Abdul-Muizz¹

Affiliation:

1. Department of Physics Engineering; Mie Universtiy; 1577 Kurima-Machiya Tsu 514-8507 Japan

Funder

JSPS KAKENHI

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800476/fullpdf

Reference22 articles.

1. Nucleation and growth mechanisms during MBE of III–V compounds

2. Understanding the growth mode transition in InAs/GaAs(001) quantum dot formation

3. Atomistic Insights for InAs Quantum Dot Formation on GaAs(001) using STM within a MBE Growth Chamber

4. Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber

5. Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy

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1. Effect of surface structural change on adsorption behavior on InAs wetting layer surface grown on GaAs(001) substrate;Journal of Crystal Growth;2021-09

2. Intermittent growth for InAs quantum dot on GaAs(001);Journal of Crystal Growth;2020-12

3. Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate;Journal of Crystal Growth;2020-02