In SituScanning Tunneling Microscope Observation of InAs Wetting Layer Formation on GaAs(001) during Molecular Beam Epitaxy Growth at 500 °C-Reference-Cited by-同舟云学术

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In SituScanning Tunneling Microscope Observation of InAs Wetting Layer Formation on GaAs(001) during Molecular Beam Epitaxy Growth at 500 °C

Published:2006-07-28 Issue:No. 30 Volume:45 Page:L777-L779
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Honma Tsuyoshi,Tsukamoto Shiro,Arakawa Yasuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements;Japanese Journal of Applied Physics;2024-02-05

2. Quantum Dots: Types and Characteristics;Encyclopedia of Smart Materials;2022

3. Intermittent growth for InAs quantum dot on GaAs(001);Journal of Crystal Growth;2020-12

4. In-situ STM Study of MBE Growth Process;Molecular Beam Epitaxy;2019-02-08

5. Structural and Optical Characteristics of InAs QDs Stacked on GaAs Substrate by Molecular Beam Epitaxy;Materials Today: Proceedings;2019

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