Ripening and annealing effects in InAs/GaAs(001) quantum dot formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1759788
Reference37 articles.
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4. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
5. Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)
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