In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=5/a=050101/pdf
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1. Effect of strain on surface morphology in highly strained InGaAs films
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Quantum size microcrystals grown using organometallic vapor phase epitaxy
4. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers
5. Surface structure determination by X-ray diffraction
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