X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer-Reference-Cited by-同舟云学术

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X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer

Published:2020-11 Issue: Volume:549 Page:125861
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Naritsuka Shigeya,Yamada Jumpei,Ueda Yuki,Nakashima Asato,Kashio Tatsuya,Maruyama Takahiro,Fujikawa Seiji,Sasaki Takuo,Takahasi Masamitu

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Graphene transistors

2. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

3. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

4. Operation of Graphene Transistors at Gigahertz Frequencies

5. High-speed graphene transistors with a self-aligned nanowire gate

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst;Journal of Crystal Growth;2022-11

2. Exploring Interfaces Through Synchrotron Radiation Characterization Techniques: A Graphene Case;Advanced Functional Materials;2022-06-08

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