100-GHz Transistors from Wafer-Scale Epitaxial Graphene-Reference-Cited by-同舟云学术

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Published:2010-02-05 Issue:5966 Volume:327 Page:662-662
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Lin Y.-M.¹,Dimitrakopoulos C.¹,Jenkins K. A.¹,Farmer D. B.¹,Chiu H.-Y.¹,Grill A.¹,Avouris Ph.¹

Affiliation:

1. IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.

Abstract

The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference5 articles.

1. I. Meric N. Baklitskaya P. Kim K. L. Shepard in Electron Devices Meeting 2008 (IEDM 2008) IEEE International San Francisco 15 to 17 December 2008 pp. 1–4.

2. Operation of Graphene Transistors at Gigahertz Frequencies

3. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

4. Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

5. www.itrs.net/Links/2008ITRS/Home2008.htm

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