P-type silicon as hole supplier for nitride-based UVC LEDs-Reference-Cited by-同舟云学术

P-type silicon as hole supplier for nitride-based UVC LEDs

Published:2019-02-28 Issue:2 Volume:21 Page:023011
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Cho Sang June^ORCID,Liu Dong,Seo Jung-Hun^ORCID,Dalmau Rafael,Kim Kwangeun,Park Jeongpil,Gong Jiarui,Zhao Deyin,Wang Fei,Yin Xin,Jung Yei Hwan,Lee In-Kyu,Kim Munho^ORCID,Wang Xudong,Albrecht John D.,Zhou Weidong,Moody Baxter,Ma Zhenqiang

Funder

Defense Advanced Research Projects Agency

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://iopscience.iop.org/article/10.1088/1367-2630/ab0445/pdf

Reference35 articles.

1. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

2. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

3. Correlation between optical and electrical properties of Mg-doped AlN epilayers

4. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

5. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

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