Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813598
Reference38 articles.
1. GaN: Processing, defects, and devices
2. Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy
3. Polarity inversion of GaN(0001) by a high Mg doping
4. Influence of high Mg doping on the microstructural and optoelectronic properties of GaN
5. Atomic structure of pyramidal defects in Mg-doped GaN
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