Atomic structure of pyramidal defects in Mg-doped GaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.235214/fulltext
Reference23 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3
3. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
4. Electrical Transport Properties of p-GaN
5. Hole conductivity and compensation in epitaxial GaN:Mg layers
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