Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE-Reference-Cited by-同舟云学术

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Published:1989-11 Issue:1-2 Volume:98 Page:209-219
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Akasaki Isamu,Amano Hiroshi,Koide Yasuo,Hiramatsu Kazumasa,Sawaki Nobuhiko

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Energy band‐gap bowing parameter in an AlxGa1−xN alloy

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Proc. 14th Intern. Symp. on GaAs and Related Compounds;Akasaki,1988

4. Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE

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