Affiliation:
1. Institute of Optoelectronics Friedrich‐Alexander University Erlangen‐Nuremberg Konrad‐Zuse‐Str. 3/5 91058 Erlangen Germany
Abstract
Aluminum nitride (AlN) possesses a high critical electric field, allowing for thinner drift regions and lower resistances compared with current materials used for power semiconductor devices. However, high activation energies of impurity dopants like magnesium or silicon and high contact resistances impede the application of AlN for typical device concepts such as TrenchFET. This article aims to develop and investigate novel vertical device structures using an AlN drift region. To evade the aforementioned issues, polarization‐induced doping is applied to generate an effective charge concentration and to accomplish less resistive ohmic contacts.
Funder
Deutsche Forschungsgemeinschaft
Reference38 articles.
1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
2. O.Hilt F.Brunner M.Wolf E. B.Treidel J.Würfl A.Thies A.Mogilatenko in2023 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD) IEEE Hong Kong2023 pp.374–377.
3. O.Hilt F.Brunner E.Cho A.Knauer E.Bahat‐Treidel J.Wurfl in2011 IEEE 23rd Int. Symp. on Power Semiconductor Devices and ICs IEEE San Diego CA USA2011 pp.239–242.
4. GaN-on-Si Power Technology: Devices and Applications
5. Y.Zhang M.Sun D.Piedra J.Hu Z.Liu Y.Lin X.Gao K.Shepard T.Palacios in2017 IEEE Int. Electron Devices Meeting (IEDM) IEEE San Francisco CA USA2017 pp.9.2.1–9.2.4.