Correlation between optical and electrical properties of Mg-doped AlN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2362582
Reference22 articles.
1. Band-edge photoluminescence of AlN epilayers
2. Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
3. Band structure and fundamental optical transitions in wurtzite AlN
4. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
5. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
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