Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop-Reference-Cited by-同舟云学术

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

Published:2013-04-25 Issue:17 Volume:110 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Iveland Justin,Martinelli Lucio,Peretti Jacques,Speck James S.,Weisbuch Claude

Funder

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.110.177406/fulltext

Reference27 articles.

1. Band-to-band auger effect in long wavelength multinary III-V alloy semiconductor lasers

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. Auger recombination in InGaN measured by photoluminescence

4. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

5. Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

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