Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference25 articles.
1. Current Status of GaN-Based Solid-State Lighting
2. Solid-State Light Sources Getting Smart
3. Auger recombination in InGaN measured by photoluminescence
4. Auger recombination rates in nitrides from first principles
5. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
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