Characteristics of Native Oxides-Interfaced GaAs/Ge <i>np</i> Diodes-Reference-Cited by-同舟云学术

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Characteristics of Native Oxides-Interfaced GaAs/Ge np Diodes

Published:2024-09 Issue:9 Volume:45 Page:1669-1672
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhou Jie¹^ORCID,Gong Jiarui¹^ORCID,Lal Shalini¹,Kim Jisoo¹,Lin Wei¹,Chen Chen²,Li Cheng²,Lu Yi¹^ORCID,Qiu Shuoyang¹^ORCID,Dong Yutao³,German Lazarus³,Wang Xudong³,Xia Fengnian²^ORCID,Ma Zhenqiang¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA

2. Department of Electrical Engineering, Yale University, New Haven, CT, USA

3. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA

Funder

Air Force Office of Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587289.pdf?arnumber=10587289

Reference27 articles.

1. The early history of the high electron mobility transistor (HEMT)

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. The Past, Present, and Future of Silicon Photonics

5. Heterostructure bipolar transistors and integrated circuits

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