Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1594833
Reference21 articles.
1. Band-edge photoluminescence of AlN epilayers
2. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
3. Optical and electrical properties of Mg-doped p-type AlxGa1−xN
4. Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
5. Mechanisms of band‐edge emission in Mg‐doped p‐type GaN
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