Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1499738
Reference17 articles.
1. 346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode
2. Semiconductor ultraviolet detectors
3. Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1−xN (0.38⩽x<1)
4. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films
5. Low interface state density AlN/GaN MISFETs
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