Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3094754
Reference28 articles.
1. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
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3. Device performance of AlGaN-based 240-300-nm deep UV LEDs
4. Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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